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Title - Auger Parameter Energies

        
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Ga, Gallium

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GALLIUM S E 3d L3M45M45 A.P. Ref.
Ga     18.69 1068.08 1086.77 85-4
Ga 7   18.7 1068.1 1086.8 79-18
GaSb     20.2     73-4
GaAs 14 1 19.3 1066.3 1085.6 78-5
GaP 7   19.3 1065.6 1084.9 78-7
GaN     19.54 1064.5 1084.05 80-39
AlGaAs     19.0     82-20
Ga2Se3 2   19.7 1065.6 1085.3 82-9
Ga2O3 6   20.5 1062.4 1082.9 82-9
 

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Notes
S Number of independent studies (where this is greater than 1)
E Number of these rejected as unsound (mainly early measurements) before the remaining ones were used to determine a mean value
A.P Auger parameter (calculated from the most intense photoelectron line and Auger line)
M.A.P. Modified Auger Parameter
v Referenced to the vacuum level (gases)
c Includes minor corrections in high binding energy lines using X-ray energy data from reference 67-1
Refs. Reference in which the data was originally published. (See the references section)
  

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Last updated 24 February, 2001

Compiled by and
Christopher Walker
KLA-Tencor,
686 Stirling Road
Slough
Berks., UK
Simon Morton
Advanced Light Source
Lawrence Berkeley Laboratory
Berkeley
CA 94720
email chris.walker@physics.org email S.Morton@uksaf.org

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© UK Surface Analysis Forum 1998