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Title - Auger Parameter Energies
        
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Si, Silicon

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SILICON S E 2p KL23L23 A.P. 1s M.A.P. Ref.
Si     99.7 1616.2 1715.9 1839.3 3455.5 74-8
Si 11 1 99.44 1616.68 1716.12     8l-18
PdSi0.6     99.8 1617.4 1717.2     80-35
MoSi2     99.56 1617.2 1716.76     8l-18
PtSi     l00.5         82-6
SiC     100.4         84-20
SiC         1714.1     80- 11
Si3N4 5   101.9 1612.2 1714.1     8l-16
Me4Si     l00.5         76-8
Ph4Si     101.2         76-8
SiO2 12   103.4 1608.8 1712.2 1842.7 3451.5 74-8
SiO2 a-cristobalite     103.25 1608.64 1711.89     8l-18
siO2 a-quartz     103.65 1608.6 1712.25     82-23
SiO2 Vycor     103.5 168.5 1712.0     78-16
SiO2 gel     103.59 1607.87 1711.46     82-23
ZnSiO3         1711.8     80-11
Phenylsilicone resin     102.74 1609.96 1712.70     82-23
Methylsilicone resin     102.92 1608.80 1711.72     82-23
Poly-dimethyl- silicone     102.40 1609.38 1711.78     82-23
Hemimorphite     101.96 1610.52 1712.48     82-23
Hemimorphite         3452.7     82-26
Wollastonite     102.36 1609.99 1712.35     82-23
Talc     103.13 1608.93 1712.06     82-23
Kaolinite     102.98 1609.03 1712.01     82-23
Kaolinite         1711.9   3451.5 79-21
Pyrophyllite     102.88 1609.20 1712.08     82-23
Pyrophyllite         1712.1   3453.1 80-11
Muscovite mica     102.36 1609.64 1712.00     82-23
Muscovite mica         1712.0   3452.5 79-21
Sillimanite     102.64 1609.48 1712.12     82-23
Spodumene     102.46 1609.59 1712.05     82-23
Almandine         1712.4   3453.0 80-11
Anorthite         1712.3   3452.3 80-11
Microcline         1711.95   3452.0 80-11
Beryl         1711.7   3452.1 80-11
Stilbite         1711.7   3451.9 80-11
Soda glass     102.95 1608.72 1711.67     82-23
Albite     102.63 1609.26 1711.89     82-23
Albite             3452.3 82-26
Natrolite     102.22 1609.62 1711.84     82-23
Natrolite             3452.4 82-26
Hydroxysodalite     101.65 1610.7 1712.35     82-23
Molecular sieve type A 2   101.65 1610.09 1711.52     81-18
Na2SiF6     104.3         77-17
SiCl4(g)     110.17v l600.16v l710.33     80-15
Si(OMe)4(g)     107.70v l601.81v l709.51     80-15
SiMe4(g)     105.94v l603.74v l709.68     80-15
SiCl3Ph(g)     108.81v l601.95v l710.76     80-15
SiCl3Me(g)     109.15v l600.96v l710.11     80-15
SiCl3H(g)     109.44v l600.30v l709.74     80-15
SiCl2Me2(g)     108.10v l601.82v l709.92     80-15
SiClMe3(g)     107.06v l602.80v l709.86     80-15
SiMe(OEt)3 (g)     107.09v l602.70v l709.79     80-15
SiMe2(OEt)2(g)     106.69v l603.00v l709.69     80-15
SiMe3(OEt) (g)     106.29v l603.29v l709.58     80-15
SiF4(g)     111.70v l595.34v l707.04     80-15
SiH4(g)     107.1v l601.2v l708.3     74-14
SiH4(g)           1847.0v 3448.2 79-4
 

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Notes
S Number of independent studies (where this is greater than 1)
E Number of these rejected as unsound (mainly early measurements) before the remaining ones were used to determine a mean value
A.P Auger parameter (calculated from the most intense photoelectron line and Auger line)
M.A.P. Modified Auger Parameter
v Referenced to the vacuum level (gases)
c Includes minor corrections in high binding energy lines using X-ray energy data from reference 67-1
Refs. Reference in which the data was originally published. (See the references section)
  

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Last updated 24 February, 2001

Compiled by and
Christopher Walker
KLA-Tencor,
686 Stirling Road
Slough
Berks., UK 		Simon Morton
Advanced Light Source
Lawrence Berkeley Laboratory
Berkeley
CA 94720
email chris.walker@physics.org email S.Morton@uksaf.org

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© UK Surface Analysis Forum 1998